NONPLANAR III-N TRANSISTORS WITH COMPOSITIONALLY GRADED SEMICONDUCTOR CHANNELS

摘要

A III-N semiconductor channel is compositionally graded between a transition layer and a III-N polarization layer. In embodiments, a gate stack is deposited over sidewalls of a fin including the graded III-N semiconductor channel allowing for formation of a transport channel in the III-N semiconductor channel adjacent to at least both sidewall surfaces in response to a gate bias voltage. In embodiments, a gate stack is deposited completely around a nanowire including a III-N semiconductor channel compositionally graded to enable formation of a transport channel in the III-N semiconductor channel adjacent to both the polarization layer and the transition layer in response to a gate bias voltage.

主权项

1. A method of forming a III-N field effect transistor (FET), the method comprising:
forming a crystalline wide band gap transition layer over a substrate; epitaxially growing a III-N semiconductor channel layer over the transition layer, wherein the growing comprises grading the composition of the III-N semiconductor channel layer over a thickness of the channel layer toward a narrower band gap composition proximate the polarization layer; epitaxially growing a wide band gap polarization layer over the III-N semiconductor channel layer; and forming a gate stack over surfaces of the III-N semiconductor channel layer between the transition layer and the polarization layer.