SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device includes: banks each including a memory cell array; word lines connected to rows in each of the banks; and an address latch circuit configured to latch a full address specifying one of the word lines, the full address including a first address and a second address. The address latch circuit receives a first command and a second command to latch the first address and the second address in accordance with the first command and the second command, respectively. Paths for the first address and the second address are configured to be separate from each other.

主权项

1. A semiconductor memory device comprising:
banks each including a memory cell array; word lines connected to rows in each of the banks; and an address latch circuit which latches a full address specifying one of the word lines, the full address including a first address and a second address, wherein the address latch circuit receives a first command and a second command to latch the first address and the second address in accordance with the first command and the second command, respectively, and wherein paths for the first address and the second address are separate from each other.