SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a transistor formed on a semiconductor substrate, a first insulation film formed above the semiconductor substrate, and first and second capacitors located on the first insulation film. The first capacitor includes a lower electrode, a ferroelectric, and an upper electrode. One of the lower electrode and the upper electrode is connected to an impurity region of the transistor. The second capacitor includes a first electrode, a first dielectric, a second electrode, a second dielectric, and a third electrode. The lower electrode is formed from the same material as the first electrode, the ferroelectric is formed from the same material as the first dielectric, and the upper electrode is formed from the same material as the second electrode.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a transistor including an impurity region formed in the semiconductor substrate, a gate insulation film located on the semiconductor substrate, and a gate electrode located on the gate insulation film; a first insulation film formed above the semiconductor substrate; a first capacitor located on the first insulation film, wherein the first capacitor includes a lower electrode, a ferroelectric, and an upper electrode, and one of the lower electrode and the upper electrode is connected to the impurity region; and a second capacitor located on the first insulation film, wherein the second capacitor includes a first electrode, a first dielectric, a second electrode, a second dielectric, and a third electrode; wherein the lower electrode and the first electrode are formed from the same material, the ferroelectric and the first dielectric are formed from the same material, and the upper electrode and the second electrode are formed from the same material.