PROCESS AND DONOR CARRIER FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE USING LIGHT INDUCED TRANSFER

摘要

A semi-conductor device is manufactured using a light induced forward transfer process, by transferring donor material from a transparent donor substrate. A donor layer with semi-conductor material and doping material is used. The donor layer may be of amorphous silicon with implanted doping. The donor substrate and a target substrate are placed facing each other. The donor layer is irradiated with light through the donor substrate at a selected position on the surface of the donor substrate, using sufficient energy to melt the donor layer at the irradiated position and to transfer to the target substrate in the molten state. On the target substrate the donor material crystallizes. Successive transfer steps of this type for transferring material to the same target substrate, using donor layers having different types and/or concentrations of donor material, may be used to manufacture a more complex device.