METHOD FOR MANUFACTURING INSULATED-GATE BIPOLAR TRANSISTOR

摘要

A method for manufacturing an insulated-gate bipolar transistor comprises: providing a first conductive-type semiconductor chip, the semiconductor chip comprising a first surface and a second surface opposite the first surface, and injecting impurities on the first surface to form a first conductive-type or second conductive-type conductive layer; forming grooves at an interval on a surface of the first conductive-type or second conductive-type conductive layer; filling a second conductive-type or first conductive-type semiconductor material inside the grooves to form channels, the channels and the conductive layer being arranged at an interval and in an alternating manner; forming an oxidation layer on the conductive layer and channels; bonding a substrate semiconductor chip on the oxidation layer; thinning the semiconductor chip from the second surface, the thinned first conductive-type semiconductor chip serving as a drift region; forming a front-side structure of an insulated-gate bipolar transistor based on the drift region; removing the substrate semiconductor chip; and removing the oxidation layer; forming a back metal electrode on the channels and the conductive layer, the back metal electrode being electrically connected to the channels and the conductive layer.