发明名称 COMPOSITE CONVERGENT ION BEAM DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a composite convergent ion beam device in which processing can be performed promptly without contaminating a sample such as a silicon wafer and high-resolution observation or precise processing can be performed, a processing observation method and a processing method employing the composite convergent ion beam device.SOLUTION: A composite convergent ion beam device comprises a first ion beam radiation system 10 including a plasma type gas ion source for generating a first ion; and a second ion beam radiation system 20 including a gas field ion source for generating a second ion. A beam diameter of a second ion beam 20A emitted from the second ion beam radiation system 20 is smaller than that of a first ion beam 10A emitted from the first ion beam radiation system 10.
申请公布号 JP2015043343(A) 申请公布日期 2015.03.05
申请号 JP20140244016 申请日期 2014.12.02
申请人 HITACHI HIGH-TECH SCIENCE CORP 发明人 MINAFUJI TAKASHI;NAKAGAWA YOSHITOMO;TASHIRO JUNICHI;SUGIYAMA YASUHIKO;FUJII TOSHIAKI;AIDA KAZUO;OGAWA TAKASHI
分类号 H01J37/317;H01J27/16;H01J27/26;H01J37/20 主分类号 H01J37/317
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