发明名称 |
COMPOSITE CONVERGENT ION BEAM DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a composite convergent ion beam device in which processing can be performed promptly without contaminating a sample such as a silicon wafer and high-resolution observation or precise processing can be performed, a processing observation method and a processing method employing the composite convergent ion beam device.SOLUTION: A composite convergent ion beam device comprises a first ion beam radiation system 10 including a plasma type gas ion source for generating a first ion; and a second ion beam radiation system 20 including a gas field ion source for generating a second ion. A beam diameter of a second ion beam 20A emitted from the second ion beam radiation system 20 is smaller than that of a first ion beam 10A emitted from the first ion beam radiation system 10. |
申请公布号 |
JP2015043343(A) |
申请公布日期 |
2015.03.05 |
申请号 |
JP20140244016 |
申请日期 |
2014.12.02 |
申请人 |
HITACHI HIGH-TECH SCIENCE CORP |
发明人 |
MINAFUJI TAKASHI;NAKAGAWA YOSHITOMO;TASHIRO JUNICHI;SUGIYAMA YASUHIKO;FUJII TOSHIAKI;AIDA KAZUO;OGAWA TAKASHI |
分类号 |
H01J37/317;H01J27/16;H01J27/26;H01J37/20 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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