METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first line pattern comprising a first film above an underlying layer, depositing a second film on a sidewall and a top surface of the first line pattern of the first film, etching the second film to eliminate the second film on the top surface of the first line pattern of the first film and leave the second film on the sidewall of the first line pattern of the first film, and removing the first line pattern to form a second line pattern of the second film above the underlying layer. The depositing the second film, etching the second film, and removing the first line pattern are sequentially performed within the same plasma processing device.

主权项

1. A method of manufacturing a semiconductor device in a plasma processing device, the method comprising:
a) forming a first line and space pattern above a substrate, the first line and space pattern comprising a first film; b) depositing a second film on a sidewall and a top surface of the first film; c) removing the second film from the top surface of the first film and leaving the second film on the sidewall of the first film; and d) removing the first film to form a second line and space pattern comprising the second film and having a finer pitch than the first line and space pattern, wherein steps b-d are performed without removing the substrate from the plasma processing device.