| 发明名称 |
STACKED NANOWIRE |
| 摘要 |
A method of fabricating stacked nanowire for a transistor gate and a stacked nanowire device are described. The method includes etching a fin as a vertical structure from a substrate and forming two or more pairs of spacers at vertically separated positions of the fin. The method also includes oxidizing to form the nanowires at the vertically separated positions of the fin. |
| 申请公布号 |
US2015064891(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201314017822 |
申请日期 |
2013.09.04 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Doris Bruce B.;Hashemi Pouya;Khakifirooz Ali;Reznicek Alexander |
| 分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating stacked nanowire for a transistor gate, the method comprising:
etching a fin as a vertical structure from a substrate; forming two or more pairs of spacers at vertically separated positions of the fin; and oxidizing to form the nanowires at the vertically separated positions of the fin. |
| 地址 |
Armonk NY US |
