| 发明名称 |
MASK FOR EXPOSURE, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING DISPLAY PANEL USING THE MASK |
| 摘要 |
A mask for etching a target layer includes a mask substrate. A phase inversion layer is disposed to correspond to a non-etched area of a pattern target layer. The phase inversion layer is configured to generate inverted light by inverting a phase of incident light and to transmit the inverted light to the non-etched area of a pattern target layer. An inversion offset part is disposed in a center part of the phase inversion layer. The inversion offset part is configured to generate offset light causing destructive interference with the inverted light in the non-etched area and to provide the offset light to the non-etched area. |
| 申请公布号 |
US2015064857(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201414224284 |
申请日期 |
2014.03.25 |
| 申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
KANG MIN;Lee Hyunjoo;Kim Bong-Yeon;Lee DongEon;Son Yong;Woo Junhyuk;Ju Jinho |
| 分类号 |
G03F1/26;H01L21/033;H01L27/12 |
主分类号 |
G03F1/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A mask for etching a pattern target layer, comprising:
a mask substrate; a phase inversion layer disposed to correspond to a non-etched area of a pattern target layer, wherein the phase inversion layer is configured to generate inverted light by inverting a phase of incident light and to transmit the inverted light to the non-etched area of the pattern target layer; and an inversion offset part disposed in a center part of the phase inversion layer, wherein the inversion offset part is configured to generate offset light causing destructive interference with the inverted light in the non-etched area and to provide the offset light to the non-etched area. |
| 地址 |
Yongin-City KR |
