| 发明名称 |
OPTICAL TOUCH DEVICE AND METHOD OF FORMING PHOTO SENSOR |
| 摘要 |
A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer. |
| 申请公布号 |
US2015062088(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201414535334 |
申请日期 |
2014.11.07 |
| 申请人 |
AU Optronics Corp. |
发明人 |
Cho An-Thung;Peng Chia-Tien;Tseng Hung-Wei;Pai Cheng-Chiu;Li Yu-Hsuan;Chen Chun-Hsiun;Huang Wei-Ming |
| 分类号 |
G06F3/042;G06F3/041;H01L31/028;H01L31/18;H01L31/20 |
主分类号 |
G06F3/042 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a photo sensor, comprising:
providing a substrate, and forming a first electrode on the substrate; forming a first silicon-rich dielectric layer on the first electrode for sensing infrared rays, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer; forming a second silicon-rich dielectric layer on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer; and forming a second electrode on the second silicon-rich dielectric layer. |
| 地址 |
Hsin-Chu TW |
