发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device includes a semiconductor chip and a joined member. The semiconductor chip has a semiconductor substrate, a first electrode, and a second electrode. The first electrode is arranged on a first surface of the semiconductor substrate. The second electrode is arranged on a second surface of the semiconductor substrate. The first electrode is joined to the joined member via a joint material. A tensile force in a surface direction of the first surface that is applied to the first surface of the semiconductor substrate from the first electrode due to thermal expansion of the first electrode at a melting temperature of the joint material is at least equal to a tensile force in the surface direction that is applied to the second surface of the semiconductor substrate from the second electrode due to thermal expansion of the second electrode at the melting temperature.
申请公布号 US2015061114(A1) 申请公布日期 2015.03.05
申请号 US201414456654 申请日期 2014.08.11
申请人 TOYOTA JIDOSHA KABUSHIKI KAISHA 发明人 NARITA Katsutoshi
分类号 H01L23/00;H01L23/485;H01L21/28;H01L23/495 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor chip; and a joined member, wherein the semiconductor chip has a semiconductor substrate, a first electrode, and a second electrode, the first electrode is arranged on a first surface of the semiconductor substrate, the second electrode is arranged on a second surface of the semiconductor substrate, the first electrode and the second electrode have larger linear expansion coefficients than a linear expansion coefficient of the semiconductor substrate, the first electrode is joined to the joined member via a joint material, and a tensile force in a surface direction of the first surface that is applied to the first surface of the semiconductor substrate from the first electrode due to thermal expansion of the first electrode at a melting temperature of the joint material is at least equal to a tensile force in the surface direction that is applied to the second surface of the semiconductor substrate from the second electrode due to thermal expansion of the second electrode at the melting temperature.
地址 Toyota-shi JP