发明名称 COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE WITH N-TYPE DIFFUSION LAYER, AND METHOD FOR MANUFACTURING SOLAR CELL ELEMENT
摘要 A composition for forming an n-type diffusion layer, which contains glass particles containing a donor element, a dispersion medium and an organic metal compound; a method for forming an n-type diffusion layer using this composition for forming an n-type diffusion layer; a method for producing a semiconductor substrate with an n-type diffusion layer; and a method for manufacturing a solar cell element.
申请公布号 WO2015029858(A1) 申请公布日期 2015.03.05
申请号 WO2014JP71807 申请日期 2014.08.20
申请人 HITACHI CHEMICAL COMPANY, LTD. 发明人 SATO, TETSUYA;YOSHIDA, MASATO;NOJIRI, TAKESHI;KURATA, YASUSHI;ASHIZAWA, TORANOSUKE;MACHII, YOICHI;IWAMURO, MITSUNORI;ORITA, AKIHIRO;SHIMIZU, MARI;SATOU, EIICHI
分类号 H01L21/225;H01L31/068 主分类号 H01L21/225
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