| 发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
| 摘要 |
According to one embodiment, a method for producing a semiconductor device includes forming a base film above a semiconductor substrate, forming a core above the base film, forming a side wall film on a side face of the core, and replacing at least part of the side wall film with a metal film by performing plating processing. |
| 申请公布号 |
US2015064901(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201414177770 |
申请日期 |
2014.02.11 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
WAKATSUKI Satoshi;SAKATA Atsuko |
| 分类号 |
H01L21/283;H01L21/768 |
主分类号 |
H01L21/283 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing a semiconductor device, comprising:
forming a base film above a semiconductor substrate; forming a core above the base film; forming a side wall film on a side face of the core; and replacing at least part of the side wall film with a metal film by performing plating processing. |
| 地址 |
Tokyo JP |
