发明名称 INTERFACE CIRCUIT
摘要 According to one embodiment, a first pull-down transistor, a mode switching circuit, and a leak-cut circuit are provided. The first pull-down transistor pulls down an input/output terminal. The mode switching circuit controls on and off of the first pull-down transistor based on an enable signal. The leak-cut circuit turns off the first pull-down transistor when a power supply of the mode switching circuit is shut down.
申请公布号 US2015061734(A1) 申请公布日期 2015.03.05
申请号 US201414199259 申请日期 2014.03.06
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 Ogawa Yosuke;Iwata Akira;Noda Junichiro
分类号 H03K17/22;H03K19/0185;H03L7/00 主分类号 H03K17/22
代理机构 代理人
主权项 1. An interface circuit comprising: a first pull-down transistor that pulls down an input/output terminal; a self-bias circuit that generates an input voltage based on a divided voltage that is generated by dividing an external voltage applied to the input/output terminal; a second pull-down transistor that is connected in series to the first pull-down transistor; a first control transistor that has power feeding made thereto from the input voltage and turns on the second pull-down transistor when an internal power supply is shut down; a second control transistor that has power feeding made thereto from the internal power supply and turns on the second pull-down transistor when the internal power supply is supplied; a mode switching circuit that has power feeding made thereto from the internal power supply and controls on and off of the first pull-down transistor based on an enable signal; a leak-cut circuit that turns off the first pull-down transistor when the internal power supply is shut down; a first inverter that has power feeding made thereto from the input voltage, the internal power supply input thereto, and controls a gate potential of the second control transistor; and a second inverter that has power feeding made thereto from the input voltage, is connected in series to the first inverter, and controls a gate potential of the first control transistor.
地址 Tokyo JP
您可能感兴趣的专利