发明名称 |
INTERFACE CIRCUIT |
摘要 |
According to one embodiment, a first pull-down transistor, a mode switching circuit, and a leak-cut circuit are provided. The first pull-down transistor pulls down an input/output terminal. The mode switching circuit controls on and off of the first pull-down transistor based on an enable signal. The leak-cut circuit turns off the first pull-down transistor when a power supply of the mode switching circuit is shut down. |
申请公布号 |
US2015061734(A1) |
申请公布日期 |
2015.03.05 |
申请号 |
US201414199259 |
申请日期 |
2014.03.06 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Ogawa Yosuke;Iwata Akira;Noda Junichiro |
分类号 |
H03K17/22;H03K19/0185;H03L7/00 |
主分类号 |
H03K17/22 |
代理机构 |
|
代理人 |
|
主权项 |
1. An interface circuit comprising:
a first pull-down transistor that pulls down an input/output terminal; a self-bias circuit that generates an input voltage based on a divided voltage that is generated by dividing an external voltage applied to the input/output terminal; a second pull-down transistor that is connected in series to the first pull-down transistor; a first control transistor that has power feeding made thereto from the input voltage and turns on the second pull-down transistor when an internal power supply is shut down; a second control transistor that has power feeding made thereto from the internal power supply and turns on the second pull-down transistor when the internal power supply is supplied; a mode switching circuit that has power feeding made thereto from the internal power supply and controls on and off of the first pull-down transistor based on an enable signal; a leak-cut circuit that turns off the first pull-down transistor when the internal power supply is shut down; a first inverter that has power feeding made thereto from the input voltage, the internal power supply input thereto, and controls a gate potential of the second control transistor; and a second inverter that has power feeding made thereto from the input voltage, is connected in series to the first inverter, and controls a gate potential of the first control transistor. |
地址 |
Tokyo JP |