发明名称 METAL TRENCH DE-COUPLING CAPACITOR STRUCTURE AND METHOD FOR FORMING THE SAME
摘要 A metal trench de-coupling capacitor structure includes a vertical trench disposed in a substrate, an insulating layer deposited on the sidewall of the vertical trench, an inter-layer dielectric layer covering the substrate and the insulating layer, and a metal layer penetrating the interlayer dielectric layer to fill up the vertical trench. The metal layer is electrically connected to a power source.
申请公布号 US2015061075(A1) 申请公布日期 2015.03.05
申请号 US201414453625 申请日期 2014.08.07
申请人 Realtek Semiconductor Corp. 发明人 Yeh Ta-Hsun
分类号 H01L23/64;H01L21/768;H01L21/762 主分类号 H01L23/64
代理机构 代理人
主权项 1. A metal trench de-coupling capacitor structure, comprising: a substrate which is grounded; a vertical trench disposed in said substrate; an insulating layer disposed on the sidewall of said vertical trench; and an inter-metal connection layer, disposed on said substrate and filling up said vertical trench, wherein said inter-metal connection layer is electrically connected to a power.
地址 HsinChu TW