发明名称 |
METAL TRENCH DE-COUPLING CAPACITOR STRUCTURE AND METHOD FOR FORMING THE SAME |
摘要 |
A metal trench de-coupling capacitor structure includes a vertical trench disposed in a substrate, an insulating layer deposited on the sidewall of the vertical trench, an inter-layer dielectric layer covering the substrate and the insulating layer, and a metal layer penetrating the interlayer dielectric layer to fill up the vertical trench. The metal layer is electrically connected to a power source. |
申请公布号 |
US2015061075(A1) |
申请公布日期 |
2015.03.05 |
申请号 |
US201414453625 |
申请日期 |
2014.08.07 |
申请人 |
Realtek Semiconductor Corp. |
发明人 |
Yeh Ta-Hsun |
分类号 |
H01L23/64;H01L21/768;H01L21/762 |
主分类号 |
H01L23/64 |
代理机构 |
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代理人 |
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主权项 |
1. A metal trench de-coupling capacitor structure, comprising:
a substrate which is grounded; a vertical trench disposed in said substrate; an insulating layer disposed on the sidewall of said vertical trench; and an inter-metal connection layer, disposed on said substrate and filling up said vertical trench, wherein said inter-metal connection layer is electrically connected to a power. |
地址 |
HsinChu TW |