发明名称 |
SEMICONDUCTOR MEMORY DEVICE, METHOD OF OPERATING THE SAME AND MEMORY SYSTEM INCLUDING THE SAME |
摘要 |
A semiconductor memory device according to an embodiment of the present invention includes a memory block, a driving circuit performing a program operation on memory cells and a voltage detector generating a detection signal when an external power supply voltage is reduced to less than a reference voltage level. The driving circuit discharges a voltage applied to a drain selection line during the program operation in response to the detection signal. |
申请公布号 |
US2015063047(A1) |
申请公布日期 |
2015.03.05 |
申请号 |
US201314107331 |
申请日期 |
2013.12.16 |
申请人 |
SK hynix Inc. |
发明人 |
CHOI Se Kyoung |
分类号 |
G11C7/12 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory device operating by receiving an external power voltage, the semiconductor memory device comprising:
a memory block coupled to a drain selection line, a source selection line and a plurality of word lines arranged between the drain selection line and the source selection line; a driving circuit suitable for performing a program operation on memory cells coupled to a selected word line, among the plurality of word lines; and a voltage detector suitable for monitoring the external power supply voltage and generating a detection signal when the external power supply voltage is reduced to less than a reference voltage level, wherein the driving circuit discharges a voltage applied to the drain selection line during the program operation in response to the detection signal. |
地址 |
Gyeonggi-do KR |