发明名称 SEMICONDUCTOR MEMORY DEVICE, METHOD OF OPERATING THE SAME AND MEMORY SYSTEM INCLUDING THE SAME
摘要 A semiconductor memory device according to an embodiment of the present invention includes a memory block, a driving circuit performing a program operation on memory cells and a voltage detector generating a detection signal when an external power supply voltage is reduced to less than a reference voltage level. The driving circuit discharges a voltage applied to a drain selection line during the program operation in response to the detection signal.
申请公布号 US2015063047(A1) 申请公布日期 2015.03.05
申请号 US201314107331 申请日期 2013.12.16
申请人 SK hynix Inc. 发明人 CHOI Se Kyoung
分类号 G11C7/12 主分类号 G11C7/12
代理机构 代理人
主权项 1. A semiconductor memory device operating by receiving an external power voltage, the semiconductor memory device comprising: a memory block coupled to a drain selection line, a source selection line and a plurality of word lines arranged between the drain selection line and the source selection line; a driving circuit suitable for performing a program operation on memory cells coupled to a selected word line, among the plurality of word lines; and a voltage detector suitable for monitoring the external power supply voltage and generating a detection signal when the external power supply voltage is reduced to less than a reference voltage level, wherein the driving circuit discharges a voltage applied to the drain selection line during the program operation in response to the detection signal.
地址 Gyeonggi-do KR