发明名称 |
METHOD OF FORMING A MEMORY DEVICE |
摘要 |
A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication. |
申请公布号 |
US2015061138(A1) |
申请公布日期 |
2015.03.05 |
申请号 |
US201414534668 |
申请日期 |
2014.11.06 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Moore John;Brooks Joseph F. |
分类号 |
H01L23/00;H01L27/24;H01L45/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a memory element, comprising the acts of:
forming circuitry in a memory array; forming a plurality of insulating portions over the circuitry; forming an electrical connection through said plurality of insulating portions to said circuitry, wherein at least one of the electrical connections comprises a via filled with tungsten; etching at least one of said insulating portions to form an etched region; forming a bond pad in the etched region; plating the bond pad to form a cap over the bond pad; forming memory material over the plurality of insulating portions; and forming an electrode over the memory material. |
地址 |
Boise ID US |