SEMICONDUCTOR DEVICES INCLUDING AIR GAP SPACERS AND METHODS OF MANUFACTURING THE SAME

摘要

A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal silicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.

主权项

1. A semiconductor device comprising:
a line pattern disposed on a substrate; a contact plug adjacent to the line pattern; and a first spacer disposed between the line pattern and the contact plug, wherein an air gap is provided between the line pattern and the first spacer, wherein the contact plug includes a metal silicide layer, wherein the first spacer includes a first portion and a second portion disposed under the first portion, wherein the second portion of the first spacer has a lateral surface roughness less than a lateral surface roughness of the first portion of the first spacer, and wherein an interface between the first portion and the second portion is spaced apart from the metal silicide layer.