METHOD FOR PREPARING GALLIUM NITRIDE-BASED LIGHT-EMITTING DIODE, AND GALLIUM NITRIDE-BASED LIGHT-EMITTING DIODE

摘要

Disclosed are a method for preparing a gallium nitride (GaN)-based light-emitting diode (LED), and the gallium nitride-based light-emitting diode. The method comprises: sequentially forming an N-type gallium nitride buffer layer (42), an N-type gallium nitride layer (43), a multi-quantum well layer (44), and a P-type gallium nitride layer (45) on a substrate (41); forming an additional conducting layer (461) on the P-type gallium nitride layer (45); forming a current blocking layer (46) on the additional conducting layer (461) and performing etching; forming a conducting layer (47), and performing patterning to form an N-type gallium nitride platform; and forming an electrode layer (48) and a passivation layer (49). An additional conducting layer used as a protective layer is formed before a current blocking layer is formed, thereby avoiding the problem of a voltage rise because a reactive power and gas ions generated when the current blocking layer is formed affect a surface of a P-type gallium nitride layer, and ensuring the quality of a film of the current blocking layer.