HYDROGEN SENSOR

摘要

According to the present invention, provided are a thin film transistor and a hydrogen detection unit connected to a gate of the thin film transistor in series. The hydrogen detection unit has a Pd-metal-insulator-metal (MIM) structure, including: a Pd thin film; an insulation film formed under the Pd thin film; and a metal film formed under the insulation film. The Pd thin film is accessed to the gate of the thin film transistor. When the hydrogen detection unit is exposed to a hydrogen environment, the Pd thin film is swollen up and partially separated from the insulation film; thus, a capacitance change between the Pd thin film and the insulation film is caused, and hydrogen detected by the capacitance change.