| 摘要 |
PROBLEM TO BE SOLVED: To provide a monolithic composite group III nitride transistor including a high voltage group IV enable switch.SOLUTION: A monolithic integrated element 300 includes an enhance mode group IV transistor 310 and more than one depletion mode group III transistors 330a, 330b. The enhance mode group IV transistor 310 is achieved as a group IV insulated gate bipolar transistor (group IV IGBT). The group III nitride transistors 330a, 330b are arranged to cover the body layer of the group IV IGBT 310. Alternatively, the group III nitride transistors 330a, 330b are arranged to cover the collector layer 312 of the IGBT 310. |
