| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a metal nitride material for a thermistor that can be directly formed into a film on a film or the like without firing and has high heat resistance and high reliability, and to provide a production method of the material, and a film type thermistor sensor.SOLUTION: The metal nitride material to be used for a thermistor comprises a metal nitride expressed by a general formula (MV)AlN, where w, x, y, z satisfy 0.0<w<1.0, 0.70≤y/(x+y)≤0.98, 0.4≤z≤0.5, and x+y+z=1; and the material has a single-phase wurtzite hexagonal crystal structure. In the formula, M represents one or both of Ti and Cr. The production method of the metal nitride material for a thermistor includes a film formation step of forming a film by performing reactive sputtering in a nitrogen-containing atmosphere by using an M-V-Al alloy sputtering target, where M represents one or both of Ti and Cr.</p> |
