PLASMA PROCESSING METHOD

摘要

A plasma processing method can etch regions having different densities at the same etching rates. When etching with surface wave plasma, both of layers contain Si and N, a processing gas includes a hydro fluorocarbon gas, a rare gas, and an oxygen gas, and a high frequency bias potential is applied to a preset location at a side of a substrate. Further, a power per unit area of the substrate, which generates the high frequency bias potential, is set to be about 0 W/m2 or more to about 400 W/m2 or less.

主权项

1. A plasma processing method comprising:
preparing a substrate on which a first layer and a second layer having different densities are formed; arranging the substrate within a processing chamber and introducing a processing gas for etching into the processing chamber; and generating surface wave plasma by exciting the processing gas with a microwave at a position spaced away from the substrate and etching the first layer and the second layer at the same time with the plasmarized processing gas, wherein both of the first layer and the second layer contain Si and N, the processing gas includes a hydro fluorocarbon gas, a rare gas, and an oxygen gas, during the etching of the first layer and the second layer, a high frequency bias potential is applied to a predetermined location at a side of a substrate such that the plasmarized processing gas is directed toward the substrate, and a power per unit area of the substrate, which generates the high frequency bias potential, is about 0 W/m2 or more to about 400 W/m2 or less.