| 发明名称 |
METHOD OF ETCHING A BORON DOPED CARBON HARDMASK |
| 摘要 |
In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH4 into a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH4, Cl2, SF6 and O2. |
| 申请公布号 |
US2015064914(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201414474841 |
申请日期 |
2014.09.02 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
KONG Byungkook;KIM Jun Wan;AHN Wonmo;YOO Jeong Hyun;KIM Hun Sang |
| 分类号 |
H01L21/033 |
主分类号 |
H01L21/033 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for etching a boron doped hardmask layer, comprising:
flowing a process gas comprising CH4 into a processing chamber; forming a plasma in the processing chamber from the process gas; and etching the boron doped hardmask layer in the presence of the plasma. |
| 地址 |
Santa Clara CA US |
