| 发明名称 |
METHOD OF FORMING A SEMICONDUCTOR DEVICE |
| 摘要 |
Provided is a method of manufacturing a semiconductor device. One exemplary embodiment involves forming a protective layer over first and second electrodes of a semiconductor device; forming a compensation film on the protective layer and between the first and second electrodes; removing the compensation film from being on the protective layer; and removing the protective layer from over the first electrode and second electrodes. |
| 申请公布号 |
US2015064895(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201414532550 |
申请日期 |
2014.11.04 |
| 申请人 |
PS4 Luxco S.a.r.l. |
发明人 |
SAINO Kanta |
| 分类号 |
H01L29/66;H01L21/8234;H01L21/768 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a protective layer over first and second electrodes of a semiconductor device; forming a compensation film on the protective layer and between the first and second electrodes; removing the compensation film from being on the protective layer; and removing the protective layer from being over the first electrode and the second electrode. |
| 地址 |
Luxembourg LU |
