| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A method for manufacturing a semiconductor device is provided. A substrate having a first gate and a second gate respectively formed in a first region and a second region is provided. An underlayer is formed on the substrate to cover the first gate in the first region and the second gate in the second region. A patterned mask with a predetermined thickness is formed on the underlayer in the first region. The underlayer corresponding to the second gate in the second region is removed by the patterned mask to expose the second gate, wherein the underlayer corresponding to the first gate in the first region is partially consumed to expose part of the first gate. |
| 申请公布号 |
US2015064861(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201314016393 |
申请日期 |
2013.09.03 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Chen Shin-Chi;Li Chih-Yueh;Lu Shui-Yen;Pai Yuan-Chi;Chuang Fong-Lung |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, comprising:
providing a substrate having a first gate and a second gate respectively formed in a first region and a second region; forming an underlayer on the substrate to cover the first gate in the first region and the second gate in the second region; forming a patterned mask with a predetermined thickness on the underlayer in the first region; and removing the underlayer corresponding to the second gate in the second region by the patterned mask to expose the second gate, wherein the underlayer corresponding to the first gate in the first region is partially consumed to expose part of the first gate. |
| 地址 |
Hsinchu TW |
