| 发明名称 |
SILICON MICROSTRUCTURING METHOD AND MICROBATTERY |
| 摘要 |
A method for forming a rough silicon wafer including the successive steps of:
performing a plasma etching of a surface of the wafer in conditions suitable to obtain a rough structure, andperforming two successive ion milling steps, one at an incidence in the range of 0 to 10°, the other at an incidence in the range of 40 to 60° relative to the normal to the wafer. |
| 申请公布号 |
US2015064567(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201414470827 |
申请日期 |
2014.08.27 |
| 申请人 |
STMicroelectronics (Tours) SAS |
发明人 |
BOUFNICHEL Mohamed;HOUDBERT Jean-Christophe |
| 分类号 |
H01M4/38;H01M4/134;H01M4/1395;H01M4/04 |
主分类号 |
H01M4/38 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a rough silicon wafer comprising the successive steps of:
performing a plasma etching of a surface of the wafer in conditions suitable to obtain a rough structure, and performing two successive ion milling steps, one at an incidence in the range of 0 to 10°, the other at an incidence in the range of 40 to 60° relative to the normal to the wafer. |
| 地址 |
TOURS FR |
