STATIC RANDOM ACCESS MEMORY DEVICE INCLUDING DUAL POWER LINE AND BIT LINE PRECHARGE METHOD THEREOF

摘要

A static random access memory (SRAM) device is provided. A memory cell is supplied with a first driving voltage. A bit line pair is connected to the memory cell. A sense amplifier is connected to the bit line pair. The sense amplifier is supplied with a second driving voltage that is lower than the first driving voltage. A control logic selects a pre-charge voltage from the first and second driving voltages, pre-charges the bit line pair to the pre-charge voltage and adjusts the pre-charged voltage to a target voltage.

主权项

1. A static random access memory (SRAM) device, comprising:
a memory cell supplied with a first driving voltage and configured to store data; a bit line pair connected to the memory cell; a sense amplifier connected to the bit line pair and supplied with a second driving voltage that is lower than the first driving voltage; and a control logic configured to select a pre-charge voltage from the first and second driving voltages, pre-charge the bit line pair to the pre-charge voltage and adjust the pre-charged voltage to a target voltage.