| 主权项 |
1. a method for wafer level packaging, comprising:
providing a first wafer including a surface, wherein a dielectric layer and a first conducting pillar are disposed on the surface and the first conducting pillar is configured to penetrate through the dielectric layer; singulating the first wafer to form a first die; forming a through hole in an interposer, wherein a thickness of the interposer is less than or equal to a length of the first conducting pillar; disposing the first conducting pillar inside the through hole; covering an encapsulation layer on the first die and a portion of the interposer; coating a first electric insulation layer on a surface of the interposer; forming a redistribution layer on the first electric insulation layer, wherein the redistribution layer is electrically coupled to the first conducting pillar; and disposing a solder ball on the redistribution layer. |
