发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a substrate; a first inverter disposed on the substrate and receiving a voltage from any one of a bit line and a complementary bit line; a semiconductor layer disposed on the first inverter; and first and third switch devices disposed on the semiconductor layer and adjusting a threshold voltage of the first inverter to a voltage level of any one of the bit line and the complementary bit line. |
申请公布号 |
US2015060862(A1) |
申请公布日期 |
2015.03.05 |
申请号 |
US201414263119 |
申请日期 |
2014.04.28 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
LIM Han-jin;LEE Kong-soo;NAM Seok-woo;KIM Dong-chan;HONG Soo-jin |
分类号 |
H01L27/11;H01L27/092 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a substrate; a first inverter disposed on the substrate, the first inverter configured to receive a voltage from one of a bit line and a complementary bit line; a semiconductor layer disposed on the first inverter; and first and third switch devices disposed on the semiconductor layer, the first and third switch devices configured to adjust a threshold voltage of the first inverter to a voltage level of one of the bit line and the complementary bit line. |
地址 |
Suwon-Si KR |