Semiconductor Device

摘要

Provided is a semiconductor device including a transistor in which a first gate and a second gate are provided with a channel formation region provided therebetween and which achieves both control of the threshold voltage and an increase in the on-state current. In a period during which first voltage with which the transistor is turned off is supplied to the first gate, control voltage for controlling the threshold voltage is supplied to the second gate. In a period during which second voltage with which the transistor is turned on is supplied to the first gate, the second voltage is supplied to the first gate and voltage in which voltage based on change in the voltage of a signal supplied to the first gate is added to the control voltage is supplied to the second gate.

主权项

1. A semiconductor device comprising:
a first transistor comprising a first gate and a second gate, wherein a channel formation region of the first transistor is provided between the first gate and the second gate, wherein in a first period during which a first voltage with which the first transistor is turned off is supplied to the first gate, a control voltage is supplied to the second gate, wherein in a second period during which a second voltage with which the first transistor is turned on is supplied to the first gate, a third voltage is supplied to the second gate, and wherein the second voltage is different from the third voltage.