NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A method of manufacturing a nitride semiconductor light emitting device which includes forming an n-type semiconductor layer, forming an active layer on the n-type semiconductor layer, forming a superlattice layer by alternately stacking at least two nitride layers made of InxAlyGa(1-x-y)N (0≦x≦1, 0≦y≦1, and 0≦x+y≦1) having different energy bandgaps from each other and doped with a p-type dopant, and forming a p-type semiconductor layer on the superlattice layer. The forming of the superlattice layer is performed by adjusting a flow rate of a p-type dopant source gas to reduce the flow rate in a growth termination period of the superlattice layer by no greater than about half of the flow rate in a growth initiation period of the superlattice layer while being doped with the p-type dopant.

主权项

1. A semiconductor light emitting device, comprising:
an n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; and a superlattice layer disposed between the active layer and the p-type semiconductor layer, wherein the superlattice layer includes a plurality of alternatively stacked nitride layers including InxAlyGa(1-x-y)N (0≦x≦1, 0≦y≦1, and 0≦x+y≦1) having different energy bandgaps; wherein the superlattice consists of a first region and a second region disposed on the first region, the first region contains the p-type dopant, a concentration of which increases in a direction toward the p-type semiconductor layer, and the second region contains the p-type dopant, a concentration of which decreases in a direction toward the p-type semiconductor layer.