| 摘要 |
Provided is an n-type SiC single crystal which has a low resistivity and a low threading dislocation density. An n-type SiC single crystal containing germanium and nitrogen, wherein the ratio of the density of germanium to the density of nitrogen (i.e., [Ge/N]) satisfies the relationship represented by the formula: 0.17 < [Ge/N] < 1.60. |
