| 摘要 |
An image sensor and a manufacturing method therefor. The image sensor comprises a photodiode, a first conducting type isolation layer, a second conducting type shallow doping region, a first conducting type shallow doping region, a transmission tube gate structure, and a floating diffusion region. The second conducting type shallow doping region is formed inside a first conducting type semiconductor substrate. The first conducting type shallow doping region is formed at the lower part of the second conducting type shallow doping region. The second conducting type shallow doping region is isolated in a second conducting type region of the photodiode by means of the first conducting type shallow doping region. The floating diffusion region is provided with second conducting type heavy doping. The image sensor reduces the distance between the floating diffusion region and the photodiode by forming the second conducting type shallow doping region in contact with the floating diffusion region, so that a photon-generated carrier can be transmitted from the photodiode to the floating diffusion region more rapidly, thereby improving the transmission efficiency of the photon-generated carrier. |
