发明名称 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR
摘要 <p>The present invention provides a semiconductor device having high heat transferability and excellent machinability, and a production method therefor. The present invention is provided with the following: an insulating substrate (13); a semiconductor chip (11) provided on the insulating substrate; and a cooling member (12) bonded to the rear surface of the insulating substrate via a bonding material (23). The insulating substrate has an insulating plate (6), and a conductive plate (5) and a conductive plate (7) provided on both surfaces of the insulating plate. The cooling member is a composite member in which a thermal stress absorbing member (1) made of aluminum and a heat transferring metal member (2) are integrally formed. The thermal stress absorbing member is provided on the side of the cooling member that bonds with the insulating substrate rear surface, and the yield stress of the thermal stress absorbing member is lower than that of the bonding material.</p>
申请公布号 WO2015029511(A1) 申请公布日期 2015.03.05
申请号 WO2014JP63466 申请日期 2014.05.21
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 KOBAYASHI HIROSHI;OMOTO YOHEI;SODA SHINNOSUKE;TAYA MASAKI
分类号 H01L23/373 主分类号 H01L23/373
代理机构 代理人
主权项
地址