POLYCRYSTALLINE SILICON CRYSTAL ORIENTATION DEGREE EVALUATION METHOD, POLYCRYSTALLINE SILICON ROD SELECTION METHOD, POLYCRYSTALLINE SILICON ROD, POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON FABRICATION METHOD

摘要

When the degree of crystalline orientation of polycrystalline silicon is evaluated by an X-ray diffraction method, each obtained disc-like sample 20 is disposed in a position where Bragg reflection from a Miller index face is detected and in-plane rotated at a rotational angle Æ with the center of the disc-like sample 20 as the center of rotation, so that an X-ray-radiated region defined by a slit Æ-scans over the principal surface of the disc-like sample 20, to determine a chart representing the dependence of the intensity of Bragg reflection from the Miller index face on the rotational angle (Æ) of the disc-like sample 20, a baseline is determined from the chart, and the diffraction intensity value of the baseline is used as an estimative index of the degree of crystalline orientation.