NON-VOLATILE MEMORY DEVICE AND METHOD FOR PREPARING THE SAME

摘要

A nonvolatile memory device according to the present invention includes a substrate for a device, a tunnel insulation layer which is formed on the substrate for the device, a graphene quantum dot which is formed on the tunnel insulation layer, a control insulation layer which is formed on the graphene quantum dot, and a gate electrode which is formed on the control insulation layer.