发明名称 METHOD OF CHEMICAL MECHANICAL POLISHING A SUBSTRATE
摘要 A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.
申请公布号 US2015065014(A1) 申请公布日期 2015.03.05
申请号 US201314014498 申请日期 2013.08.30
申请人 Dow Global Technologies LLC ;Rohm and Haas Electronic Materials CMP Holdings, Inc. 发明人 Jensen Michelle;Qian Bainian;Yeh Fengji;DeGroot Marty W.;Islam Mohammad T.;Van Hanehem Matthew Richard;String Darrell;Murnane James;Hendron Jeffrey James;Nowland John G.
分类号 B24B37/24;B24B37/22;B24B37/20 主分类号 B24B37/24
代理机构 代理人
主权项 1. A method of chemical mechanical polishing a substrate, comprising: providing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of the polishing layer is selected to exhibit (i) an initial hydrolytic stability, wherein a linear dimension of a sample of the polishing layer changes by <1% following immersion in deionized water for 24 hours at 25° C.; coupled with (ii) a sustained hydrolytic instability, wherein the linear dimension of the sample of the polishing layer by ≧1.75% following immersion in deionized water for seven days at 25° C.;a rigid layer having a top surface and a bottom surface;a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer;a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer;optionally, a release liner; wherein the optional release liner is disposed on the platen side of the pressure sensitive platen adhesive layer;optionally, an endpoint detection window; and,optionally, at least one additional layer interfaced with and interposed between the bottom surface of the rigid layer and the stack side of the pressure sensitive platen adhesive layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.
地址 Midland MI US