LIGHT EMITTING COMPONENT AND LIGHT EMITTING DEVICE USING SAME

摘要

A light emitting device including a light emitting component is provided, wherein said light emitting comprising an integrated light emitting diode and a semiconductor field effect transistor. The semiconductor field effect transistor may prevent situations such as overheating and voltage instability by controlling a current passing through the light emitting diode as well as enhancing the ability to withstand electrostatic discharge and reducing cost of the light emitting device in multiple aspects.

主权项

1. A light emitting device comprising:
a light emitting component comprising:
a growth substrate;at least one light emitting diode formed on said growth substrate, wherein said light emitting diode comprises a first semiconductor layer, an active layer formed on said first semiconductor layer, and a second semiconductor layer formed on said active layer; andat least one semiconductor field effect transistor formed on said growth substrate, wherein said transistor comprises a base layer, a channel semiconductor layer formed on said base layer, a source semiconductor layer and a drain semiconductor layer formed on said channel semiconductor layer; wherein a gate electrode and said channel semiconductor layer form a Schottky contact; and wherein a source electrode and a drain electrode respectively form ohmic contacts with said source semiconductor layer and said drain semiconductor layer; and a circuit pattern, wherein said circuit pattern electrically connects said transistor to form a current stabilizing unit and electrically couples said current stabilizing unit to said light emitting diode.