INSULATION SHEET MADE FROM SILICON NITRIDE, AND SEMICONDUCTOR MODULE STRUCTURE USING THE SAME

摘要

An insulation sheet made from silicon nitride comprising: a sheet-shaped silicon-nitride substrate which contains β-silicon-nitride crystal grains as a main phase; and a surface layer which is formed on one face or both front and back faces of surfaces of the silicon-nitride substrate and is formed from a resin or a metal which includes at least one element selected from among In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti. A semiconductor module structure using the insulation sheet made from silicon nitride.

主权项

1. An insulation sheet, comprising:
a sheet-shaped silicon-nitride substrate comprising β-silicon-nitride crystal grains as a main phase; and a surface layer formed on one face or both front and back faces of Surfaces of the silicon-nitride substrate from at least one metal element selected from the group consisting of In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti; wherein: the surface layer has a Vickers hardness of 200 or less and a thickness of 100 μm or less, the silicon-nitride substrate has a surface roughness Ra of 0.2 to 1.5 μm, and the insulation sheet is suitable for a pressure contact structure in which the insulation sheet is pressed to another member through the surface layer.