SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first electrode, a first insulating section, and a second insulating section. The first semiconductor region includes silicon carbide, is of a first conductivity type and includes first and second parts. The second semiconductor region includes silicon carbide, is of a second conductivity type and is provided on the second part. The third semiconductor region includes silicon carbide, is of the first conductivity type and is provided on the second semiconductor region. The first electrode is provided on the first part and the third semiconductor region. The first insulating section is provided on the third semiconductor region and juxtaposed with the first electrode. The second insulating section is provided between the first electrode and the first part and between the first electrode and the first insulating section.

主权项

1. A semiconductor device comprising:
a first semiconductor region including silicon carbide, the first semiconductor region being of a first conductivity type and including a first part and a second part; a second semiconductor region including silicon carbide, the second semiconductor region being of a second conductivity type and provided on the second part, a direction connecting the first part and the second part crossing a stacking direction connecting the second part and the second semiconductor region; a third semiconductor region including silicon carbide, the third semiconductor region being of the first conductivity type and provided on the second semiconductor region; a first electrode provided on the first part and on the third semiconductor region, an end of the first electrode being located on the third semiconductor region; a first insulating section provided on the third semiconductor region and juxtaposed with the first electrode in a direction crossing the stacking direction; and a second insulating section provided between the first electrode and the first part and between the first electrode and the first insulating section.