| 摘要 |
A switching circuit having: a semiconductor layer that includes a source region, a drain region, and a channel region that is arranged between the source region and the drain region; a gate electrode that is arranged so as to face the channel region; source wiring that is formed from a first material that has higher conductivity than the semiconductor layer, and that is connected to the source region; drain wiring that is formed from a second material that has higher conductivity than the semiconductor layer, and that is connected to the drain region; and decoupling wiring that is formed from a third material that has higher conductivity than the semiconductor layer, and that is arranged between the source wiring and the drain wiring. In accordance with the voltage of the gate electrode, the source region and the drain region become conductive for a first time period, and the source region and the drain region become non-conductive for a second time period that differs from the first time period. The voltage of the source wiring or the drain wiring changes during the second time period. The voltage of the decoupling wiring is fixed during the second time period. |
