| 摘要 |
The present invention is a metal nitride material used for a thermistor, comprising a metal nitride represented by the general formula: Mx(Al1-wSiw)yNz (wherein M represents at least one of Ti, V, Cr, Mn, Fe, and Co; 0.0 < w < 0.3; 0.70 ≤ y/(x+y) ≤ 0.98; 0.4 ≤ z ≤ 0.5; and x + y + z = 1), such that the crystal structure of the same is a single phase of hexagonal wurtzite-type. A manufacturing method for this metal nitride material for a thermistor comprises a deposition step which forms a film by performing reactive sputtering within a nitrogen-containing atmosphere using a M-Al-Si alloy sputtering target (wherein M represents at least one of Ti, V, Cr, Mn, Fe, and Co). |
