| 摘要 |
A solid-state imaging element including a phase difference detection pixel pair that includes first (2PA) and second (2PB) phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit (52, 53b, 53c) arranged at an upper side of a semiconductor substrate (12) and a second photoelectric conversion unit (42, 43) arranged within the semiconductor substrate. The first photoelectric conversion film (52) may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film. |
