METHOD OF PRODUCING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor substrate and a silicon carbide semiconductor device which can suppress occurrence of step bunching effectively.SOLUTION: A method of producing a silicon carbide semiconductor substrate 10 includes steps of preparing a silicon carbide substrate 1 having a principal plane 1A and forming a silicon carbide epitaxial layer 5 on the principal plane 1A of the silicon carbide substrate 1 by using a raw material gas. In the step of forming the silicon carbide epitaxial layer 5, taking the ratio of the number of atoms of carbon contained in the raw material gas G divided by the number of atoms of silicon contained in the raw material gas as x and the growth temperature of the silicon carbide epitaxial layer 5 as y(°C), x and y fulfill the relationship: -250x+1830≤y≤-500x+2150 and 1≤x≤1.2.