| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of improving reliability, and a method for manufacturing the same.SOLUTION: A nonvolatile semiconductor memory device 1 includes: a plurality of memory cells each of which has a tunnel insulation film 2 provided on a substrate 7 containing a silicon, a floating gate 3 provided on the tunnel insulation film 2, an inter-gate insulation film 4 provided on the floating gate 3, a first control gate 5 provided on the inter-gate insulation film 4 and containing a silicon and a second control gate 6 provided on the first control gate 5 and using a metal, and which are arranged in a predetermined direction with gaps 9 therebetween; and insulation films 8 provided between the plurality of memory cells and above the gaps 9. The upper ends of the gaps 9 are positioned below the lower surface of the second control gate 6.</p> |
