| 发明名称 |
PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
| 摘要 |
A process for producing a semiconductor device includes: forming an SiC epitaxial layer on an SiC substrate; implanting the epitaxial layer with ions; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and carrying out a heat treatment on the epitaxial layer. The semiconductor device includes an SiC substrate, an SiC epitaxial layer formed on the SiC substrate, and a gettering layer having a higher defect density than a defect density of the SiC substrate. |
| 申请公布号 |
US2015064882(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201214118095 |
申请日期 |
2012.05.04 |
| 申请人 |
Danno Katsunori;Saitoh Hiroaki;Seki Akinori;Kimoto Tsunenobu |
发明人 |
Danno Katsunori;Saitoh Hiroaki;Seki Akinori;Kimoto Tsunenobu |
| 分类号 |
H01L29/16;H01L21/322;H01L21/324;H01L21/02;H01L21/04 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A process for producing a semiconductor device, the process comprising:
forming an SiC epitaxial layer on an SiC substrate, wherein the epitaxial layer is heat treated in the process; implanting ions into the epitaxial layer; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and conducting gettering at 1500° C. or higher after the gettering layer is formed. |
| 地址 |
Susono-shi JP |
