SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The present technology includes a semiconductor memory device, including a channel layer and interlayer insulation layers surrounding the channel layer. The interlayer insulation layers are stacked with a trench interposed therebetween. A seed pattern is formed on a surface of the trench and a metal layer is formed on the seed pattern in the trench.

主权项

1. A method of manufacturing a semiconductor memory device, the method comprising:
forming interlayer insulation layers surrounding a channel layer, wherein the interlayer insulation layers are stacked with a trench interposed therebetween; forming a seed film on a surface of the trench and on surfaces of the interlayer insulation layers; forming a sacrificial pattern in the trench; forming a seed pattern in the trench by etching the seed film by using the sacrificial pattern as an etching barrier; and growing a metal layer from the seed pattern in the trench.