发明名称 |
MEMORY DEVICES INCLUDING VERTICAL PILLARS AND METHODS OF MANUFACTURING AND OPERATING THE SAME |
摘要 |
In a semiconductor device and a method of forming such a device, the semiconductor device comprises a substrate of semiconductor material extending in a horizontal direction. A plurality of interlayer dielectric layers is provided on the substrate. A plurality of gate patterns is provided, each gate pattern between a neighboring lower interlayer dielectric layer and a neighboring upper interlayer dielectric layer. A vertical channel of semiconductor material extends in a vertical direction through the plurality of interlayer dielectric layers and the plurality of gate patterns, a gate insulating layer between each gate pattern and the vertical channel that insulates the gate pattern from the vertical channel, the vertical channel being in contact with the substrate at a contact region that comprises a semiconducting region. |
申请公布号 |
US2015064865(A1) |
申请公布日期 |
2015.03.05 |
申请号 |
US201414529157 |
申请日期 |
2014.10.31 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Sim Jae-Sung;Choi Jung-Dal |
分类号 |
H01L27/115;H01L29/423;H01L29/04;H01L29/66;H01L29/16 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |