NEGATIVE BIAS THERMAL INSTABILITY STRESS TESTING OF TRANSISTORS

摘要

A circuit is powered through a P-type transistor whose thermal instability behavior is to be evaluated. The threshold of the P-type transistor under evaluation and consequently the saturation current of the transistor are reflected in the frequency of the circuit, which in one embodiment is a ring oscillator. Additional circuitry is connected to the P-type transistor and the ring oscillator to ensure the proper stress conditions for the transistor and consequently to the evaluation of the P-type transistor.

主权项

1. A circuit comprising:
a transistor for testing, the transistor having a gate-to source voltage Vgs and a drain-to-source voltage Vds; a sensor circuit connected to the drain of the transistor; a complementary control circuitry attached to the transistor and the sensor circuit such that the sensor circuit is powered off during a stress test of the transistor, and the drain-to-source voltage of the transistor for testing is zero during the stress test, and the sensor circuit is powered through the transistor during an evaluation of the stress test.